Description
ABB KS D211 B (3BHE022455R1101) — High-Power Thyristor/Diode Module
Product: KS D211 B, Power Semiconductor Module
Order Code: 3BHE022455R1101
Manufacturer: ABB (Semiconductors Division, now part of Hitachi Energy)
Primary Application: A high-power, press-pack thyristor (or diode) module designed for use in HVDC (High-Voltage Direct Current) transmission, large industrial drives, static VAR compensators (SVC), and other high-power conversion applications requiring robust, reliable switching of currents in the range of thousands of amperes.
1. Core Overview & Technology
The ABB KS D211 B is a member of ABB’s renowned «D» series of press-pack power semiconductors. Unlike modular thyristors, these are disk-type, pressure-mounted devices. They are designed to be clamped between heatsinks with significant force, ensuring optimal thermal contact and mechanical stability.
Key Technology:
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Press-Pack Design: The semiconductor wafer is housed between two molybdenum discs and encapsulated in a ceramic (typically Al₂O₃) housing. This design provides double-sided cooling for superior heat dissipation and allows for series stacking to achieve very high voltage ratings.
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Failure Mode: In the rare event of a catastrophic failure, they are designed to fail short-circuit, which is generally preferable in series strings for HVDC valves as it allows the system to remain operational (with reduced capacity) until the next maintenance outage.
2. Key Features
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High Current & Voltage Ratings: Capable of blocking several kilovolts and conducting currents in the kA range.
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Robust Mechanical Construction: Ceramic-metal (CERAMET) housing for high mechanical strength and excellent electrical isolation.
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Double-Sided Cooling: Efficient heat extraction through both anode and cathode sides, enabling high current density.
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Designed for Series/Parallel Operation: The press-pack design is ideal for stacking multiple devices in series to form a high-voltage valve, as used in HVDC converters.
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Gate Unit Compatibility: Requires an external firing unit or gate driver (e.g., ABB’s HIL or DOLD gate units) to provide the high-power gate pulse for turn-on.
3. Model Number Breakdown & Specifications
Typical Electrical Specifications (for D211 series — MUST be verified from datasheet):
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Repetitive Peak Off-State Voltage (V DRM / V RRM ): Likely in the range of 5.2 kV to 8.5 kV.
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Average On-State Current (I T(AV) ): Could be ~3,500 A (with proper cooling).
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Surge Current (I TSM ): Very high, typically > 50 kA (non-repetitive).
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Critical Rate of Rise of Off-State Voltage (dv/dt): High, e.g., 2000 V/µs.
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Gate Trigger Current (I GT ): Requires a substantial pulse from the gate unit.
4. System Integration & Application
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Clamping Assembly: The module must be installed in a precisely engineered clamping fixture that applies the correct contact pressure (specified in kN, e.g., 70-100 kN). Incorrect pressure can lead to overheating or mechanical damage.
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Cooling: Integrated into a liquid-cooled (deionized water/glycol) heatsink system. The coolant flow, pressure drop, and inlet temperature are critical design parameters.
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Snubber & Protection: Used in conjunction with snubber circuits (RC networks) to limit dv/dtand di/dt. Protected by fast fuses and coordinated with the converter control.
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Gate Drive: Connected to a firing unit that provides the isolated, high-power gate pulse synchronized to the AC line voltage.
5. Typical Applications
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HVDC Converter Valves: The fundamental switching element in the thyristor bridges that convert AC to DC and vice versa.
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Large Motor Drives (LCI): For Load Commutated Inverters driving massive synchronous motors (e.g., in compressor or pump applications).
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Static VAR Compensators (SVC): In thyristor-switched or thyristor-controlled reactor (TCR/TSR) branches for dynamic reactive power compensation.
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Solid-State Circuit Breakers & Transfer Switches.
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